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HiPerFETTM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque (TO-264) PLUS 247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
IXFX 73N30Q IXFK 73N30Q
VDSS = 300 V ID25 = 73 A RDS(on) = 42 m trr 250 s
PLUS 247TM (IXFX) Maximum Ratings 300 300 20 30 73 292 73 60 2.5 5 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density
l
G
(TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
0.4/6 Nm/lb.in. 6 10 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.0 V 4.0 V 100 nA 100 A 2 mA 42 m
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 TJ = 125C
(c) 2001 IXYS All rights reserved
98870 (12/01)
IXFK 73N30Q IXFX 73N30Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 30 47 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1340 340 37 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External) 36 82 12 190 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 51 78 0.26 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 73 292 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
IF = 25A, -di/dt = 100 A/s, VR = 100 V
0.8 7
Dim.
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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